Semiconductor device
US9443987B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2014 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Aug 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.