Nanopyramid sized opto-electronic structure and method for manufacturing of same
US9444007B2 · kind B2 · utility
9Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2014 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Dec 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/813
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Aspects of the invention provide methods and devices. In one embodiment, the invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanopyramids are grown utilizing a CVD based selective area growth technique. The nanopyramids are grown directly or as core-shell structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.