Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer
US9444224B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2014 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Dec 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34333
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An ultraviolet laser diode having multiple portions in the n-cladding layer is described herein. The laser diode comprises a p-cladding layer, an n-cladding layer, a waveguide, and a light-emitting region. The n-cladding layer includes at least a first portion and a second portion. The first portion maintains material quality of the laser diode, while the second portion pulls the optical mode from the p-cladding layer toward the active region. The first portion may have a higher aluminum composition than the second portion. The waveguide is coupled to the n-cladding layer and the light-emitting region is coupled to the waveguide. The light-emitting region is located between the n-cladding layer and the p-cladding layer. Other embodiments are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.