Patent · US Active

Gas-phase synthesis method for forming semiconductor nanowires

US9447520B2 · kind B2 · utility

1Cited by

0References

23Claims

0Family size

Assignee

QUNANO AB · SE

Inventors

Lars Samuelson · Malmö, SE
Martin Magnusson · Malmö, SE
Knut Deppert · Lund, SE
Magnus Heurlin · Furulund, SE

Key dates

Filing date	May 11, 2011
Grant date	Sep 20, 2016
Priority date	—
Expiry date	Jul 8, 2032

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B29/62
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

The present invention provides a method and a system for forming wires (1) that enables a large scale process combined with a high structural complexity and material quality comparable to wires formed using substrate-based synthesis. The wires (1) are grown from catalytic seed particles (2) suspended in a gas within a reactor. Due to a modular approach wires (1) of different configuration can be formed in a continuous process. In-situ analysis to monitor and/or to sort particles and/or wires formed enables efficient process control.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.