Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device
US9448482B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2015 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | May 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30604
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a pattern forming method including (1) forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) capable of increasing the polarity by the action of an acid so that a solubility thereof in a developer containing an organic solvent is decreased, (2) exposing the film, (3) developing the film by a developer including an organic solvent to form a negative pattern having a space part obtained by removing a part of the film and a residual film part which is not removed by the developing, (4) forming a resist film for reversing a pattern, on the negative pattern, so as to be embedded in the space part in the negative pattern, and (5) reversing the negative pattern into a positive pattern by removing the residual film part in the negative pattern by using an alkaline wet etching liquid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.