Current induced spin-momentum transfer stack with dual insulating layers
US9449668B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2015 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Jul 7, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/385
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A high speed, low power method to control and switch the magnetization direction of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a pinned magnetic layer, a reference magnetic layer with a fixed magnetization direction and a free magnetic layer with a changeable magnetization direction. The magnetic layers are separated by insulating non-magnetic layers.A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, can be measured to read out the information stored in the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.