Fan-out wafer level package and manufacturing method thereof
US9449911B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2015 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Jul 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a wafer level package and a manufacturing method thereof. The wafer level package method includes preparing a patterned wafer, forming a recess in a position, in which a semiconductor chip is to be attached, of the patterned wafer through an etching process, fixing the semiconductor chip to the interior of the recess, and applying a passivation material to portions other than the semiconductor chip within the recess and to an upper end of the wafer. The wafer level package includes a silicon or glass wafer including a recess formed through etching and having an area larger than a semiconductor chip, a semiconductor chip fixed to the interior of the recess, and a passivation material filling an empty space other than the semiconductor chip within the recess and applied to a portion corresponding to an area larger than the semiconductor chip on an upper end of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.