Thin film transistor and display device
US9449990B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 30, 2013 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Aug 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a thin film transistor which is provided with an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with a gate electrode, an oxide semiconductor layer composed of a single layer which is used as a channel layer, an etch stopper layer to protect a surface of the oxide semiconductor layer, a source-drain electrode, and a gate insulator layer arranged between the gate electrode and the channel layer. The metal elements constituting the oxide semiconductor layer comprise In, Zn and Sn. The hydrogen concentration in the gate insulator layer in direct contact with the oxide semiconductor layer is controlled to 4 atomic % or lower.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.