Photodiode of high quantum efficiency
US9450000B2 · kind B2 · utility
2Cited by
1References
13Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Aug 19, 2014 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Aug 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
A photodiode includes at least one central pad arranged on a light-receiving surface of a photodiode semiconductor substrate. The pad is made of a first material and includes lateral sidewalls surrounded by a spacer made of a second material having a different optical index than the first material. The lateral dimensions of the pad are smaller than an operating wavelength of the photodiode. Both the first and second materials are transparent to that operating wavelength. The pads and spacers are formed at a same time gate electrodes and sidewall spacers of MOS transistors are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.