Power semiconductor device, manufacturing method therefor, and method for operating the power semiconductor device

US9450019B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Christoph Kadow · Gauting, DE
• Marc Strasser · Munich, DE

Key dates

• Filing date: Jun 13, 2014
• Grant date: Sep 20, 2016
• Expiry date: Sep 23, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/371
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A power semiconductor device includes a semiconductor body including a first surface, an edge delimiting the semiconductor body in a horizontal direction substantially parallel to the first surface, an active area including at least one of several transistor structures connected in parallel and several diode structures connected in parallel, and a peripheral area arranged between the active area and the edge. The power semiconductor further device includes a plurality of word lines, a plurality of bit lines separated from the word lines, and a plurality of temperature sensors arranged on or at the first surface, wherein each of the temperature sensors is connected with one of the bit lines and one of the word lines or each of the temperature sensors is formed by a respective portion of one of the bit lines.