Memristor devices and fabrication
US9450022B1 · kind B1 · utility
4Cited by
6References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2012 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Sep 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A method for fabricating a digital memristor crossbar array includes applying a protective layer on at least a portion of a memristive layer. A method for fabricating an analog memristor crossbar array includes providing a self-aligning first electrode layer. An analog memristor includes a memristive layer bar arranged to self-align said second electrode on said memristive layer along its length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.