Semiconductor light-emitting device
US9450151B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2015 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | May 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48237
Abstract
A semiconductor light-emitting device includes a laminated semiconductor structure having a first surface and a second surface opposing each other, a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively forming the first surface and the second surface, and an active layer. First and second electrodes are disposed on the first surface of the laminated semiconductor structure and the second surface of the laminated semiconductor structure, respectively. A connecting electrode extends to the first surface to be connected to the second electrode. A support substrate is disposed on the second electrode, and an insulating layer insulates the connecting electrode from the active layer and the first conductivity-type semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.