Memory structure having top electrode with protrusion
US9450183B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2014 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Aug 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
The present disclosure relates to an RRAM (resistive random access memory) cell having a top electrode with a geometry configured to improve the electric performance of the RRAM cell, and an associated method of formation. In some embodiments, the RRAM cell has a lower insulating layer with a micro-trench located over a lower metal interconnect layer disposed within a lower inter-level dielectric (ILD) layer that overlies a semiconductor substrate. A bottom electrode is disposed over the micro-trench, and a dielectric data storage layer is located over the bottom electrode. A top electrode is disposed over the dielectric data storage layer. The top electrode has a protrusion that extends outward from a bottom surface of the top electrode at a position overlying the micro-trench. The protrusion generates a region having an enhanced electric field within the dielectric data storage layer, which improves performance of the RRAM cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.