Method of producing a semiconductor laser element, and semiconductor laser element

US9450376B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Roland Enzmann · Regensburg, DE
• Stephan Haneder · Regensburg, DE
• Markus Arzberger · Sunnyvale, US
• Christoph Walter · Stuttgart, DE
• Tomasz Swietlik · Regensburg, DE
• Harald König · Bernhardswald, DE
• Robin Fehse · Bad Abbach, DE
• Mathias Kämpf · Burglengenfeld, DE
• Markus Graul · Regensburg, DE
• Markus Horn · Straubing, DE

Key dates

• Filing date: Aug 12, 2013
• Grant date: Sep 20, 2016
• Expiry date: Aug 12, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/02345
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).