Method for selectively depositing a layer on a three dimensional structure
US9453279B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2014 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Aug 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method may include providing a substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane; directing an ion beam comprising angled ions to the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, wherein a first portion of the substrate feature is exposed to the ion beam and wherein a second portion of the substrate feature is not exposed to the ion beam; directing molecules of a molecular species to the substrate wherein the molecules of the molecular species cover the substrate feature; and providing a second species to react with the molecular species, wherein selective growth of a layer comprising the molecular species and the second species takes place such that a first thickness of the layer grown on the first portion is different from a second thickness grown on the second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.