Static random access memory and method of controlling the same
US9455025B2 · kind B2 · utility
8Cited by
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20Claims
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Key dates
| Filing date | Jun 27, 2014 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Jun 27, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/419
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A static random access memory (SRAM) including at least a memory cell array, a first data line connected to the memory cell array, and a read assist unit connected to the first data line. The read assist unit is configured to suppress a voltage level of the first data line during a read operation of the memory cell array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.