Method for forming dielectric film in trenches by PEALD using H-containing gas
US9455138B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2015 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Nov 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a dielectric film in a trench on a substrate by plasma-enhanced atomic layer deposition (PEALD) performs one or more process cycles, each process cycle including: (i) feeding a silicon-containing precursor in a pulse; (ii) supplying a hydrogen-containing reactant gas at a flow rate of more than about 30 sccm but less than about 800 sccm in the absence of nitrogen-containing gas; (iii) supplying a noble gas to the reaction space; and (iv) applying RF power in the presence of the reactant gas and the noble gas and in the absence of any precursor in the reaction space, to form a monolayer constituting a dielectric film on a substrate at a growth rate of less than one atomic layer thickness per cycle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.