Backside device contact
US9455187B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2015 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Jun 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68372
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating a backside device contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer. A trench is formed that extends through the device layer or a trench isolation region in the device layer and that further extends partially through the buried insulator layer. A sacrificial material is deposited in the trench and, thereafter, at least one dielectric layer is formed on the device layer. An opening is formed in the at least one dielectric layer that communicates with the trench. After the opening is formed, the sacrificial material is removed from the trench with access through the opening. After the sacrificial material is removed from the trench, the trench is filled with a contact plug and the opening is filled with a contact coupled with the contact plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.