Method for improving fin isolation
US9455196B2 · kind B2 · utility
2Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2015 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Nov 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0193
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a workpiece to create a doped fin structure is disclosed. A portion of the workpiece is subjected to a pre-amorphizing implant to create an amorphized region. This amorphized region is then implanted with dopant species, at an implant energy and dose so that the dopant species are contained within the amorphized region. The doped amorphized region is then subjected to a laser melt anneal which crystallizes the amorphized region. The dopant profile is box-like, and the dopant is confined to the previously amorphized region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.