Mask set and method for fabricating semiconductor device by using the same
US9455202B2 · kind B2 · utility
7Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 2014 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | May 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask set includes a first mask and a second mask. The first mask includes geometric patterns. The second mask includes at least a strip-shaped pattern with a first edge and a second edge opposite to the first edge. The strip-shaped pattern has a centerline along a long axis of the strip-shaped pattern. The first edge includes inwardly displaced segments shifting towards the centerline and each of the inwardly displaced segments overlaps each of the geometric patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.