Fin-type field effect transistor and manufacturing method thereof
US9455255B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2015 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Mar 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a fin-type field effect transistor includes sequentially forming a first mask and a second mask on a semiconductor substrate; patterning the second mask; forming and patterning a third mask on the second mask in accordance with a fin pattern of the fin-type field effect transistor; etching the semiconductor substrate, the first mask, and the second mask through the third mask, wherein portions of the first and second masks are removed and a first trench is formed in the semiconductor substrate; removing the third mask; etching the first mask through the second mask and removing the second mask; etching the semiconductor substrate through the first mask to form a plurality of fins and a second trench disposed between adjacent fins, wherein etching the semiconductor substrate further deepens the first trench such that a depth of the first trench is greater than a depth of the second trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.