High voltage device and method for manufacturing the same
US9455339B2 · kind B2 · utility
1Cited by
8References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2014 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Oct 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high voltage (HV) device and method for manufacturing the same are provided, at least comprising a substrate, an insulation formed on the substrate, a deep well formed in the insulation, an air layer formed in the insulation and disposed adjacent to the bottom surface of the deep well. A bottom surface of the deep well is spaced apart from the substrate. Also, the air layer, interposed between the deep well and the substrate, is spaced apart from the substrate. In one embodiment, an air layer further communicates with an atmosphere outside the HV device, which facilitates heat dissipation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.