Transistor having a back-barrier layer and method of making the same

US9455341B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chi-Ming Chen · Zhubei City, TW
• Chih-Wen Hsiung · Hsinchu, TW
• Po-Chun Liu · Hsinchu, TW
• Ming-Chang Ching · Zhubei City, TW
• Chung-Yi Yu · Baoshan, TW
• Xiaomeng Chen · Hsinchu, TW

Key dates

• Filing date: Jul 17, 2013
• Grant date: Sep 27, 2016
• Expiry date: Jul 17, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A transistor includes a substrate and a buffer layer on the substrate, wherein the buffer layer comprises p-type dopants. The transistor further includes a channel layer on the buffer layer and a back-barrier layer between a first portion of the channel layer and a second portion of the channel layer. The back-barrier layer has a band gap discontinuity with the channel layer. The transistor further includes an active layer on the second portion of the channel layer, wherein the active layer has a band gap discontinuity with the second portion of the channel layer. The transistor further includes a two dimensional electron gas (2-DEG) in the channel layer adjacent an interface between the channel layer and the active layer.