Patent · US Active

Semiconductor wafer composed of monocrystalline silicon and method for producing it

US9458554B2 · kind B2 · utility

11Cited by

0References

8Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Timo Mueller · Burghausen, DE
Gudrun Kissinger · Lebus, DE
Dawid Kot · Opoczno, PL
Andreas Sattler · Trostberg, DE

Key dates

Filing date	Jul 24, 2013
Grant date	Oct 4, 2016
Priority date	—
Expiry date	Oct 25, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/24975
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

The invention relates to a semiconductor wafer of monocrystalline silicon, and to a method for producing it. The semiconductor wafer has a zone, DZ, which is free of BMD defects and extends from a front side of the semiconductor wafer into the bulk of the semiconductor wafer, and a region having BMD defects which extends from the DZ further into the bulk of the semiconductor wafer. A silicon single crystal is pulled by the Czochralski method and processed to form a polished monocrystalline silicon substrate wafer. The substrate wafer is treated by rapidly heating and cooling the substrate wafer, slowly heating the rapidly heated and cooled substrate wafer, and keeping the substrate wafer at a specific temperature and over a specific period.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.