Cross point array MRAM having spin hall MTJ devices
US9460768B2 · kind B2 · utility
13Cited by
5References
8Claims
0Family size
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Key dates
| Filing date | Mar 14, 2013 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Mar 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Cross point array magnetoresistive random access memory (MRAM) implementing spin hall magnetic tunnel junction (MTJ)-based devices and methods of operation of such arrays are described. For example, a bit cell for a non-volatile memory includes a magnetic tunnel junction (MTJ) stack disposed above a substrate and having a free magnetic layer disposed above a dielectric layer disposed above a fixed magnetic layer. The bit cell also includes a spin hall metal electrode disposed above the free magnetic layer of the MTJ stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.