Initialization techniques for multi-level memory cells using multi-pass programming
US9460780B2 · kind B2 · utility
7Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Jan 20, 2015 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Jan 20, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5648
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods are provided for programming multi-level non-volatile memory cells, the multi-level non-volatile memory cells accessible by a plurality of word lines. The methods include using a four-pass programming technique to program a block of the multi-level non-volatile memory cells, detecting a power cycle before completing programming of the block of the multi-level non-volatile memory cells, and upon power-up initialization, resuming programming on the block of the multi-level non-volatile memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.