Method of manufacturing semiconductor device and substrate processing method
US9460911B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2015 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | May 7, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02189
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device for forming a thin film having characteristics of low permittivity, high etching resistance and high leak resistance is provided. The method includes: forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes: (a) supplying a source gas containing the predetermined element and a halogen element to the substrate; (b) supplying a first reactive gas containing three elements including carbon, nitrogen and hydrogen wherein a number of carbon atoms in each molecule of the first reactive gas is greater than that of nitrogen atoms in each molecule of the first reactive gas to the substrate; (c) supplying a nitriding gas as a second reactive gas to the substrate; and (d) supplying an oxidizing gas as a third reactive gas to the substrate, wherein (a) through (d) are non-simultaneously performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.