Wafer-to-wafer bonding structure
US9461007B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2015 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Jul 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/07025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer-to-wafer bonding structure may include: a first wafer including a first insulating layer on a first substrate and on a first copper (Cu) pad that penetrates the first insulating layer and has portions protruding from an upper surface of the first insulating layer, and a first barrier metal layer on a lower surface and sides of the first Cu pad; a second wafer including a second insulating layer on a second substrate and on a second copper (Cu) pad that penetrates the second insulating layer, has portions protruding from an upper surface of the second insulating layer, and is bonded to the first Cu pad, and a second barrier metal layer on a lower surface and sides of the second Cu pad; and a polymer layer covering protruding sides of the first and second barrier metal layers and disposed between the first and second wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.