Semiconductor device and manufacturing method thereof
US9461043B1 · kind B1 · utility
9Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2015 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Jun 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
Abstract
A semiconductor device includes a substrate, a first gate, a second gate, and an insulating structure. The substrate includes a first fin and a second fin. The first gate is disposed over the first fin. The second gate is disposed over the second fin. A gap is formed between the first gate and the second gate, and the gap gets wider toward the substrate. The insulating structure is disposed in the gap. The insulating structure has a top surface and a bottom surface opposite to each other. The bottom surface faces the substrate. An edge of the top surface facing the first gate is curved inward the top surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.