Patent · US Active

Diode having a reduced surface field effect trench structure and method of manufacturing a diode having a reduced surface field effect trench structure

US9461183B2 · kind B2 · utility

1Cited by

4References

14Claims

0Family size

Assignee

NXP B.V. · NL

Inventors

Tim Boettcher · Scheeßel, DE
Jan Fischer · Lüneburg, DE

Key dates

Filing date	Sep 29, 2014
Grant date	Oct 4, 2016
Priority date	—
Expiry date	Sep 29, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/64
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A diode comprising a reduced surface field effect trench structure, the reduced surface field effect trench structure comprising at least two trenches formed in a substrate and separated from one another by a joining region of the substrate, the joining region comprising an electrical contact and a layer of p-doped semiconductor material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.