Method of forming controllably conductive oxide
US9461247B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Feb 2, 2015 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Feb 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/24
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In fabricating a memory device, a first electrode is provided. An alloy is formed thereon, and the alloy is oxidized to provide an oxide layer. A second electrode is provided on the oxide layer. In a further method of fabricating a memory device, a first electrode is provided. Oxide is provided on the first electrode, and an implantation step in undertaken to implant material in the oxide to form a layer including oxide and implanted material having an oxygen deficiency and/or defects therein. A second electrode is then formed on the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.