Integrated hybrid laser source compatible with a silicon technology platform, and fabrication process
US9461441B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 19, 2015 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Nov 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/04257
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photonic integrated circuit includes a first insulating region encapsulating at least one metallization level, a second insulating region at least partially encapsulating a gain medium of a laser source, and a stacked structure placed between the two insulating regions. The stacked structure includes a first polycrystalline or single-crystal silicon layer, a second polycrystalline or single-crystal silicon layer, an intermediate layer optically compatible with the wavelength of the laser source and selectively etchable relative to silicon and that separates the first layer from a first portion of the second layer, and the gain medium facing at least one portion of the first layer. The first layer, the intermediate layer, and the first portion of the second layer form an assembly containing a resonant cavity and a waveguide, which are optically coupled to the gain medium, and a second portion of the second layer containing at least one other photonic component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.