Electrical parametric testing for back contact semiconductor solar cells
US9461582B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2014 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Sep 8, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and structures for extracting at least one electric parametric value from a back contact solar cell. According to one embodiment, a first layer of electrically conductive metal having an interdigitated pattern of base electrodes and emitter electrodes is formed on the backside surface of a semiconductor solar cell substrate. An electrically insulating layer is formed on the first layer of electrically conductive metal providing electrical isolation between the first layer of electrically conductive metal and a second layer of electrically conductive metal. Vias are formed in the electrically insulating layer providing access to the first layer of electrically conductive metal. A second electrically conductive metallization layer is formed on the electrically insulating layer and contacts the first electrically conductive metal layer through the vias. An electrical parametric value is extracted from the solar cell by probing the electrically conductive metallization layer with an electrical current or voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.