Method and apparatus for controlling a gate voltage in high electron mobility transistor
US9461637B2 · kind B2 · utility
1Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2013 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Aug 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
According to example embodiments, a method for controlling a gate voltage applied to a gate electrode of a high electron mobility transistor (HEMT) may include measuring a voltage between a drain electrode and a source electrode of the HEMT, and adjusting a level of the gate voltage applied to the gate electrode of the HEMT according to the measured voltage. The level of the gate electrode may be adjusted if the voltage between the drain electrode and the source electrode is different than a set value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.