Thermal load leveling during silicon crystal growth from a melt using anisotropic materials
US9464364B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2011 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Mar 28, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1024
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.