Frederick M. Carlson
16Patents
3h-index
13Co-inventors
53Inventor score
Filing activity: Mar 28, 2003 → Jul 16, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7033443B2 | Gas-cooled clamp for RTP | Emerging Cross-Sectional Technologies | 10 | Expired |
| US7816153B2 | Method and apparatus for producing a dislocation-free crystalline sheet | Emerging Cross-Sectional Technologies | 7 | Active |
| US6735378B1 | Pressure controlled heat source and method for using such for RTP | Electricity | 4 | Expired |
| US9567691B2 | Melt purification and delivery system | Chemistry; Metallurgy | 1 | Active |
| US9957636B2 | System and method for crystalline sheet growth using a cold block and gas jet | Emerging Cross-Sectional Technologies | 1 | Active |
| US8226903B2 | Removal of a sheet from a production apparatus | Emerging Cross-Sectional Technologies | 1 | Active |
| US10030317B2 | Apparatus and method for controlling thickness of a crystalline sheet grown on a melt | Emerging Cross-Sectional Technologies | 1 | Active |
| US9587324B2 | Apparatus for processing a melt | Emerging Cross-Sectional Technologies | 0 | Active |
| US7998224B2 | Removal of a sheet from a production apparatus | Emerging Cross-Sectional Technologies | 0 | Active |
| US10801125B2 | Method for controlling heat flow within a silicon melt using a heat diffusion barrier assembly | Emerging Cross-Sectional Technologies | 0 | Active |
| US9267219B2 | Gas-lift pumps for flowing and purifying molten silicon | Emerging Cross-Sectional Technologies | 0 | Active |
| US10106911B2 | Method for growing a silicon crystal substrate from a melt by directing a flow of molten silicon around a baffle structure | Emerging Cross-Sectional Technologies | 0 | Active |
| US10415151B1 | Apparatus for controlling heat flow within a silicon melt | Emerging Cross-Sectional Technologies | 0 | Active |
| US10179958B2 | Apparatus and method for crystalline sheet growth | Chemistry; Metallurgy | 0 | Active |
| US9464364B2 | Thermal load leveling during silicon crystal growth from a melt using anisotropic materials | Emerging Cross-Sectional Technologies | 0 | Active |
| US8545624B2 | Method for continuous formation of a purified sheet from a melt | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.