Integrated cantilever switch
US9466452B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2015 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Mar 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H2001/0084
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An integrated transistor in the form of a nanoscale electromechanical switch eliminates CMOS current leakage and increases switching speed. The nanoscale electromechanical switch features a semiconducting cantilever that extends from a portion of the substrate into a cavity. The cantilever flexes in response to a voltage applied to the transistor gate thus forming a conducting channel underneath the gate. When the device is off, the cantilever returns to its resting position. Such motion of the cantilever breaks the circuit, restoring a void underneath the gate that blocks current flow, thus solving the problem of leakage. Fabrication of the nano-electromechanical switch is compatible with existing CMOS transistor fabrication processes. By doping the cantilever and using a back bias and a metallic cantilever tip, sensitivity of the switch can be further improved. A footprint of the nano-electromechanical switch can be as small as 0.1×0.1 μm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.