Determination of semiconductor chamber operating parameters for the optimization of critical dimension uniformity
US9466466B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2015 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Sep 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods, systems, and computer programs are presented for optimizing Critical Dimension Uniformity (CDU) during the processing of a substrate. One method includes identifying an operation of a recipe for processing a substrate within a chamber, the operation being configured to provide a pulsed radio frequency (RF) to the chamber. A plurality of tests are performed in the chamber for the operation utilizing the pulsed RF, each test having a duty cycle for the pulsed RF selected from a plurality of RF duty cycles. The method also includes for each test, measuring the critical dimension (CD) and the CDU for features in the substrate, and selecting a first duty cycle from the plurality of RF duty cycles based on the measured CDs and CDUs for the plurality of tests. The method also includes setting the selected first duty cycle in the operation of the recipe for processing the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.