Photolithographic methods of producing structures in radiation-emitting semiconductor components

US9466487B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Bernd Böhm · Regensburg, DE
• Sebastian Hoibl · Kiefersfelden, DE

Key dates

• Filing date: Aug 15, 2014
• Grant date: Oct 11, 2016
• Expiry date: Aug 15, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A photolithographic method which produces a structure in a radiation-emitting semiconductor component by providing a semiconductor wafer having a semiconductor layer sequence, applying a first photoresist layer to the semiconductor wafer, providing a mask, and arranging the mask relative to the coated semiconductor wafer, exposing the first photoresist layer and imaging the mask in the first photoresist layer, arranging the mask or a different mask relative to the semiconductor wafer at another position different from a first position and again exposing the first photoresist layer and imaging the mask in the first photoresist layer or applying a second photoresist layer to the first photoresist layer, arranging the mask or a different mask relative to the semiconductor wafer at a second position, and exposing the second photoresist layer and imaging the mask in the second photoresist layer, forming a patterned photoresist layer and patterning the semiconductor wafer.