Beam shapers, annealing systems employing the same, methods of heat treating substrates and methods of fabricating semiconductor devices
US9466490B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2015 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Jun 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A treatment system comprises an energy source that generates a energy beam that is emitted along an energy beam pathway. A beam section shaper is positioned along the energy beam pathway that receives an incident energy beam and modifies a section shape thereof to output a shape-modified energy beam. A beam intensity shaper is positioned along the energy beam pathway that receives an incident energy beam having a first intensity profile and outputs an intensity-modified energy beam having a second intensity profile, wherein the first intensity profile has a relative maximum average intensity at a center region thereof and wherein the second intensity profile has a relative minimum average intensity at a center region thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.