Semiconductor structure suitable for electrostatic discharge protection application
US9466598B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2015 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Jul 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
Abstract
A semiconductor structure suitable for ESD protection application is provided. The semiconductor structure includes a first well, a second well, a third well, a first fin, a second fin, an anode, a cathode and a first doping region. The first well and the second well are disposed in the third well. The first fin is disposed on the first well. The second fin is disposed on the second well. The anode is disposed on the first fin. The cathode is disposed on the second fin. The first doping region is disposed under the first fin, and separates the first fin from the first well. The first well, the second well, the first fin and the second fin have a first doping type. The third well and the first doping region have a second doping type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.