Semiconductor device with air gap and method for fabricating the same
US9466603B2 · kind B2 · utility
10Cited by
0References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 27, 2015 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Oct 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a plurality of first conductive structures formed over a substrate, second conductive structures each formed between neighboring first conductive structures of the first conductive structures, air gaps each formed between the second conductive structures and the neighboring first conductive structures thereof, third conductive structures each capping a portion of the air gaps, and capping structures each capping the other portion of the air gaps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.