Method of fabricating a MIM capacitor with minimal voltage coefficient and a decoupling MIM capacitor and analog/RF MIM capacitor on the same chip with high-K dielectrics

US9466661B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Dina H. Triyoso · Mechanicville, US
• Shao-fu Sanford Chu · Singapore, SG
• Bo Yu · Singapore, SG

Key dates

• Filing date: Oct 10, 2014
• Grant date: Oct 11, 2016
• Expiry date: Oct 10, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/212

Abstract

Methods for fabricating MIM capacitors with low VCC or decoupling and analog/RF capacitors on a single chip and the resulting devices are provided. Embodiments include forming: first and second metal lines in a substrate; a first electrode over, but insulated from, the first metal line; a first high-k dielectric layer on the first electrode, the first high-k dielectric layer having a coefficient α; a second electrode on the first high-k dielectric layer and over a portion of the first electrode; a second high-k dielectric layer on the second electrode, the second high-k dielectric layer having a coefficient α′ opposite in polarity but substantially equal in magnitude to α; a third electrode on the second high-k dielectric layer over the entire first electrode; and a metal-filled via through a dielectric layer down to the first metal line, and a metal-filled via through the dielectric layer down to the second metal line.