Multiple channel length finFETs with same physical gate length
US9466669B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2015 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Apr 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a first finFET device including a first fin, a first gate electrode structure on sidewalls and an upper surface of the first fin, a first channel region beneath the first gate electrode structure, and first source and drain regions in the first fin on opposite sides of the first channel region, and a second finFET device including a second fin, a second gate electrode structure on sidewalls and an upper surface of the second fin, a second channel region beneath the second gate electrode structure, and second source and drain regions in the second fin on opposite sides of the second channel region. The second gate electrode structure has a second physical gate length that is substantially the same as a first physical gate length of the first gate electrode structure, and the second finFET device has a second effective channel length that is different from a first effective channel length of the first gate electrode structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.