Semiconductor device having stressor and method of fabricating the same
US9466721B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2015 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Dec 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/514
Abstract
A semiconductor device may include a fin active region including a lower fin active region surrounded by a device isolation layer and an upper fin active region protruding from a top surface of the device isolation layer, a gate pattern disposed on top and side surfaces of the upper fin active region, and a source/drain region formed in the fin active region located at a side of the gate pattern. The gate pattern extends onto the device isolation region. The source/drain region includes a trench and epitaxial layers that fill the trench. Sidewalls of the trench include first sidewalls and second sidewalls that connect the first sidewalls to a bottom surface of the trench. The bottom surface of the trench is located at a lower level than the top surface of the device isolation layer beneath the gate pattern, and the second sidewalls of the trench have inclined {111} planes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.