Patent · US Active

Optoelectronic device and method for producing an optoelectronic device

US9466759B2 · kind B2 · utility

3Cited by

2References

14Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Joachim Hertkorn · Neukirchen, DE
Jan-Philipp Ahl · Regensburg, DE
Lorenzo Zini · Regensburg, DE
Matthias Peter · Orpund, CH
Tobias Meyer · Durham, US
Alexander Frey · Lappersdorf, DE

Key dates

Filing date	Sep 18, 2013
Grant date	Oct 11, 2016
Priority date	—
Expiry date	Sep 18, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/82
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method is provided for producing an optoelectronic device, comprising the steps of providing a substrate, applying a nucleation layer on a surface of the substrate, applying and patterning a mask layer on the nucleation layer, growing a nitride semiconductor in a first growth step, wherein webs are laid which form a lateral lattice, wherein the webs have trapezoidal cross-sectional areas in places in the direction of growth, and laterally overgrowing the webs with a nitride semiconductor in a second growth step, to close spaces between the webs.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.