Gas processing apparatus
US9468698B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2015 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Feb 27, 2035 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01D2257/90
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A gas processing apparatus of an embodiment includes: first and second dielectric substrates facing with each other; first and second discharge electrodes respectively disposed on a pair of facing principal surfaces of the dielectric substrates; first and second ground electrodes respectively disposed on a pair of principle surfaces at opposite sides of the principle surfaces of the dielectric substrates; a gas flow path to supply gas to be processed between the discharge electrodes; an AC power source to generate first and second plasma-induced flows by applying an AC voltage between the discharge electrodes and the ground electrodes; and a region disposed between the dielectric substrates at downstream of the plasma-induced flows from the discharge electrodes, and a gap between the dielectric substrates being 1.3 times or less of a sum of thicknesses of the plasma-induced flows.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.