Substrate including a diamond layer and a composite layer of diamond and silicon carbide, and, optionally, silicon

US9469918B2 · kind B2 · utility

Assignee

• II-VI Incorporated · US

Inventors

• Wen-Qing Xu · Sarver, US
• Elgin E. Eissler · Renfrew, US
• Chao Liu · Butler, US
• Charles D. Tanner · Hannahstown, US
• Charles J. Kraisinger · Butler, US
• Michael K. Aghajanian · Bel Air, US

Key dates

• Filing date: Jan 20, 2015
• Grant date: Oct 18, 2016
• Expiry date: Feb 6, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/30
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

A multilayer substrate includes a diamond layer CVD grown on a composite layer. The composite layer includes particles of diamond and silicon carbide and, optionally, silicon. A loading level (by volume) of diamond in the composite layer can be ≧5%; ≧20%; ≧40%; or ≧60%. The multilayer substrate can be used as an optical device; a detector for detecting radiation particles or electromagnetic waves; a device for cutting, drilling, machining, milling, lapping, polishing, coating, bonding, or brazing; a braking device; a seal; a heat conductor; an electromagnetic wave conductor; a chemically inert device for use in a corrosive environment, a strong oxidizing environment, or a strong reducing environment, at an elevated temperature, or under a cryogenic condition; or a device for polishing or planarization of other devices, wafers or films.