Photoresist composition and associated method of forming an electronic device
US9470976B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Aug 24, 2015 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Aug 24, 2035 |
Classification
- Technology area (CPC —)General
Abstract
A photoresist composition includes a first polymer in which at least half of the repeat units are photoacid-generating repeat units, and a second polymer that exhibits a change in solubility in an alkali developer under the action of acid. In the first polymer, each of the photoacid-generating repeat units comprises photoacid-generating functionality and base-solubility-enhancing functionality.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.