Hybrid magnetoresistive read only memory (MRAM) cache mixing single-ended and differential sensing
US9472257B2 · kind B2 · utility
4Cited by
11References
33Claims
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Key dates
| Filing date | May 15, 2014 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | May 15, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/067
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A hybrid cache architecture uses magnetoresistive random-access memory (MRAM) caches but has two different types of bit cell sensing. One type of bit cell sensing is single-ended and the other type of bit cell sensing is differential. The result is a uniform bit cell array but a non-uniform sense amplifier configuration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.